FCPF220N80 Key Features
- Typ. RDS(on) = 188 m
- Ultra Low Gate Charge (Typ. Qg = 78 nC)
- Low Eoss (Typ. 7.5 uJ @ 400 V)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)
- 100% Avalanche Tested
- RoHS pliant
- ESD Improved Capability
- Part: FCPF220N80
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 664.68 KB
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