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FCPF22N60NT - N-Channel MOSFET

This page provides the datasheet information for the FCPF22N60NT, a member of the FCP22N60N N-Channel MOSFET family.

Datasheet Summary

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

  • BVDSS > 650 V @ TJ = 150oC.
  • RDS(on) = 140 mΩ (Typ. ) @ VGS = 10 V, ID = 11 A.
  • Ultra Low Gate Charge (Typ. Qg = 45 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 196.4 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Datasheet preview – FCPF22N60NT

Datasheet Details

Part number FCPF22N60NT
Manufacturer Fairchild Semiconductor
File Size 649.33 KB
Description N-Channel MOSFET
Datasheet download datasheet FCPF22N60NT Datasheet
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Full PDF Text Transcription

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FCP22N60N / FCPF22N60NT — N-Channel SupreMOS® MOSFET FCP22N60N / FCPF22N60NT N-Channel SupreMOS® MOSFET 600 V, 22 A, 165 mΩ November 2013 Features • BVDSS > 650 V @ TJ = 150oC • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A • Ultra Low Gate Charge (Typ. Qg = 45 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.
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