FCPF22N60NT Datasheet | Fairchild Semiconductor

FCP22N60N / FCPF22N60NT - N-Channel Supre MOS® MOSFET FCP22N60N / FCPF22N60NT N-Channel Supre MOS® MOSFET 600 V, 22 A, 165 mΩ November 2013 Features - BVDSS > 650 V @ TJ = 150o C - RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A - Ultra Low Gate Charge (Typ. Qg = 45 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 p F) - 100% Avalanche Tested - Ro HS pliant Application - LCD/LED/PDP TV - Lighting - Solar Inverter - AC-DC Power Supply Description The Supre MOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. Supre MOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/tele power, FPD TV power, ATX power, and...