FCPF220N80 Datasheet | Fairchild Semiconductor

- N-Channel Super FET® II MOSFET N-Channel Super FET® II MOSFET 800 V, 23 A, 220 m May 2015 Features - Typ. RDS(on) = 188 m - Ultra Low Gate Charge (Typ. Qg = 78 n C) - Low Eoss (Typ. 7.5 u J @ 400 V) - Low Effective Output Capacitance (Typ. Coss(eff.) = 304 p F) - 100% Avalanche Tested - Ro HS pliant - ESD Improved Capability Applications - AC-DC Power Supply - LED Lighting Description Super FET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, Super FET II MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications. TO-220F...