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FCPF220N80 - MOSFET

Datasheet Summary

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • Typ. RDS(on) = 188 m.
  • Ultra Low Gate Charge (Typ. Qg = 78 nC).
  • Low Eoss (Typ. 7.5 uJ @ 400 V).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 304 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD Improved Capability.

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Datasheet Details

Part number FCPF220N80
Manufacturer Fairchild Semiconductor
File Size 664.68 KB
Description MOSFET
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FCPF220N80 — N-Channel SuperFET® II MOSFET FCPF220N80 N-Channel SuperFET® II MOSFET 800 V, 23 A, 220 m May 2015 Features • Typ. RDS(on) = 188 m • Ultra Low Gate Charge (Typ. Qg = 78 nC) • Low Eoss (Typ. 7.5 uJ @ 400 V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications • AC-DC Power Supply • LED Lighting Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
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