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FCPF220N80 — N-Channel SuperFET® II MOSFET
FCPF220N80
N-Channel SuperFET® II MOSFET
800 V, 23 A, 220 m
May 2015
Features
• Typ. RDS(on) = 188 m • Ultra Low Gate Charge (Typ. Qg = 78 nC) • Low Eoss (Typ. 7.5 uJ @ 400 V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability
Applications
• AC-DC Power Supply • LED Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.