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FCPF600N60Z Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Download the FCPF600N60Z datasheet PDF. This datasheet also includes the FCP600N60Z variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (FCP600N60Z_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

Applications • LCD / LED / PDP TV and Monitor Lighting • Solar Inverter • AC-DC Power Supply D G TO-220 G D S GD S TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC 89 0.71 -55 to +150 300 - DC - AC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) (f > 1 Hz) 7.4 4.7 22.2 135 1.5 0.89 20 100 28 0.22 FCP600N60Z FCPF600N60Z 600 ±20 ±30 7.4* 4.7* 22.2* Unit V V V A A mJ A mJ V/ns V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient FCP600N60Z FCPF600N60Z 1.4 62.5 4.5 62.5

Overview

FCP600N60Z / FCPF600N60Z N-Channel MOSFET March 2013 FCP600N60Z / FCPF600N60Z N-Channel SuperFET® II MOSFET 600 V, 7.

Key Features

  • 650 V @TJ = 150°C.
  • Max. RDS(on) = 600 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 20 nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 74 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.

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