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FCPF600N60Z - N-Channel MOSFET

Download the FCPF600N60Z datasheet PDF. This datasheet also covers the FCP600N60Z variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SUPERFET II MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150C.
  • Typ. RDS(on) = 510 mW.
  • Ultra Low Gate Charge (Typ. Qg = 20 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 74 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCP600N60Z-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FCPF600N60Z N-Channel MOSFET Fairchild Semiconductor
FCPF600N60Z N-Channel MOSFET INCHANGE
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FCPF650N80Z N-Channel MOSFET INCHANGE
FCPF067N65S3 N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FCPF600N60ZL1-F154 N-Channel MOSFET
FCPF600N65S3R0L N-Channel MOSFET
FCPF600N65S3R0L-F154 N-Channel MOSFET
FCPF067N65S3 N-Channel Power MOSFET
FCPF099N65S3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, SUPERFET) II 600 V, 7.4 A, 600 mW FCP600N60Z, FCPF600N60Z Description SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features  650 V @ TJ = 150C  Typ. RDS(on) = 510 mW  Ultra Low Gate Charge (Typ. Qg = 20 nC)  Low Effective Output Capacitance (Typ. Coss(eff.