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FCPF600N60Z - N-Channel MOSFET

This page provides the datasheet information for the FCPF600N60Z, a member of the FCP600N60Z N-Channel MOSFET family.

Description

SUPERFET II MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150C.
  • Typ. RDS(on) = 510 mW.
  • Ultra Low Gate Charge (Typ. Qg = 20 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 74 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • RoHS Compliant.

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Datasheet preview – FCPF600N60Z

Datasheet Details

Part number FCPF600N60Z
Manufacturer ON Semiconductor
File Size 430.85 KB
Description N-Channel MOSFET
Datasheet download datasheet FCPF600N60Z Datasheet
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Full PDF Text Transcription

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MOSFET – N-Channel, SUPERFET) II 600 V, 7.4 A, 600 mW FCP600N60Z, FCPF600N60Z Description SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features  650 V @ TJ = 150C  Typ. RDS(on) = 510 mW  Ultra Low Gate Charge (Typ. Qg = 20 nC)  Low Effective Output Capacitance (Typ. Coss(eff.
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