FCPF600N60Z - N-Channel MOSFET

Features

With TO-220F packaging.
High speed switching.
Low gate input resistance.
Standard level gate drive.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	FCPF600N60Z
Manufacturer	INCHANGE
File Size	243.57 KB
Description	N-Channel MOSFET
Datasheet	FCPF600N60Z Datasheet
Additional preview pages of the FCPF600N60Z datasheet.

📁 Similar Datasheet

FCPF600N60Z - N-Channel MOSFET (Fairchild Semiconductor)
FCPF600N60Z - N-Channel MOSFET (ON Semiconductor)
FCPF600N60ZL1-F154 - N-Channel MOSFET (ON Semiconductor)
FCPF600N65S3R0L - N-Channel MOSFET (ON Semiconductor)
FCPF600N65S3R0L-F154 - N-Channel MOSFET (ON Semiconductor)
FCPF650N80Z - MOSFET (Fairchild Semiconductor)
FCPF067N65S3 - N-Channel MOSFET (Fairchild Semiconductor)
FCPF067N65S3 - N-Channel Power MOSFET (ON Semiconductor)
FCPF099N65S3 - N-Channel MOSFET (ON Semiconductor)
FCPF11N60 - SuperFET MOSFET (Fairchild Semiconductor)

Other Datasheets by INCHANGE

FCPF650N80Z - N-Channel MOSFET
FCPF067N65S3 - N-Channel MOSFET
FCPF099N65S3 - N-Channel MOSFET
FCPF11N60NT - N-Channel MOSFET
FCPF125N65S3 - N-Channel MOSFET
FCPF1300N80Z - N-Channel MOSFET
FCPF13N60NT - N-Channel MOSFET
FCPF150N65F - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc N-Channel MOSFET Transistor FCPF600N60Z ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 7.4 A IDM Drain Current-Single Pulsed 22.2 A PD Total Dissipation 28 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 4.5 ℃/W isc website：www.

Published: Oct 24, 2020 |