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FCPF850N80Z Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FCPF850N80Z — N-Channel SuperFET® II MOSFET August 2015 FCPF850N80Z N-Channel SuperFET® II MOSFET 800 V, 8 A, 850.

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.

In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.

Key Features

  • Typ. RDS(on) = 710 mΩ (Typ. ).
  • Ultra Low Gate Charge (Typ. Qg = 22 nC).
  • Low Eoss (Typ. 2.3 uJ @ 400V).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 106 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD Improved Capability.

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