FDA15N65 Key Features
- 16A, 650V, RDS(on) = 0.44Ω @VGS = 10 V
- Low gate charge ( typical 48.5 nC)
- Low Crss ( typical 23.6 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: FDA15N65
- Manufacturer: Fairchild (official site)
- Size: 840.11 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDA16N50 | N-Channel MOSFET |
| FDA16N50-F109 | N-Channel UniFET MOSFET |
| FDA18N50 | N-Channel MOSFET |
| FDA032N08 | N-Channel MOSFET |
| FDA20N50 | 500V N-Channel MOSFET |
FDA15N65 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...