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FDA18N50 - N-Channel MOSFET

Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 265 mΩ (Max. ) @ VGS = 10 V, ID = 9.5 A.
  • Low Gate Charge (Typ. 45 nC).
  • Low Crss (Typ. 25 pF).
  • 100% Avalanche Tested.

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FDA18N50 — N-Channel UniFETTM MOSFET FDA18N50 N-Channel UniFETTM MOSFET 500 V, 19 A, 265 mΩ Features • RDS(on) = 265 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply June 2014 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
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