FDA18N50 Key Features
- RDS(on) = 265 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A
- Low Gate Charge (Typ. 45 nC)
- Low Crss (Typ. 25 pF)
- 100% Avalanche Tested
| Part Number | Description |
|---|---|
| FDA15N65 | N-Channel MOSFET |
| FDA16N50 | N-Channel MOSFET |
| FDA16N50-F109 | N-Channel UniFET MOSFET |
| FDA032N08 | N-Channel MOSFET |
| FDA20N50 | 500V N-Channel MOSFET |