Datasheet Details
| Part number | FDA2712 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 375.62 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Download | FDA2712 Download (PDF) |
|
|
| Part number | FDA2712 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 375.62 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Download | FDA2712 Download (PDF) |
|
|
|
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications • PDP application D G G DS TO-3PN S MOSFET Maximum Ratings Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 3) Ratings 250 ±30 64 44 240 245 4.5 357 2.85 -55 to +150 300 Units V V A A mJ V/ns W W/oC oC o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.35 40 Units o C/W ©2007 Fairchild Semiconductor Corporation FDA2712 Rev.
A 1 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.com/ FDA2712 N-Channel UltraFET Trench MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDA2712 Device FDA2712 Package TO-3PN Reel Size N/A Tape Width N/A Quantity 30 Electrical Characteristics Symbol Parameter Test Conditions Min.
FDA2712 N-Channel UltraFET Trench MOSFET April 2007 FDA2712 N-Channel UltraFET Trench MOSFET 250V, 64A,.
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