* RDS(on) = 2.95mΩ ( Typ.) @ VGS = 10V, ID = 75A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on) <.

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application
* DC to DC converto.

FDB031N08

FDB035AN06A0

FDB035N10A

FDB016N04AL7

FDB024N04AL7

FDB024N06

FDB024N08BL7

FDB029N06

FDB045AN08A0

FDB045AN08A0-F085

FDB045AN08_F085

FDB047N10

FDB050AN06A0