FDB0165N807L Datasheet | Fairchild Semiconductor

FDB0165N807L N-Channel PowerTrench® MOSFET December 2015 N-Channel PowerTrench® MOSFET 80 V, 310 A, 1.6 mΩ Features General Description - Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 36 A - Fast Switching Speed - Low Gate Charge - High Performance Trench Technology for Extremely Low rDS(on) - High Power and Current Handling Capability - RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications. Applications - Industrial Motor Drive - Industrial Power Supply -...