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FDB0165N807L Datasheet 80v 310a N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDB0165N807L N-Channel PowerTrench® MOSFET December 2015 FDB0165N807L N-Channel PowerTrench® MOSFET 80 V, 310 A, 1.

General Description

„ Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 36 A „ Fast Switching Speed „ Low Gate Charge „ High Performance Trench Technology for Extremely Low rDS(on) „ High Power and Current Handling Capability „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.

Applications „ Industrial Motor Drive „ Industrial Power Supply „ Industrial Automation „ Battery Operated Tools „ Battery Protection „ Solar Inverters „ UPS and Energy Inverters „ Energy Storage „ Load Switch 123 567 4 1.

Gate 2.

Key Features

  • General.

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