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FDB0165N807L - 80V 310A N-Channel MOSFET

General Description

Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 36 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability RoHS Compliant This N-Channel MOSFET is produced us

Key Features

  • General.

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FDB0165N807L N-Channel PowerTrench® MOSFET December 2015 FDB0165N807L N-Channel PowerTrench® MOSFET 80 V, 310 A, 1.6 mΩ Features General Description „ Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 36 A „ Fast Switching Speed „ Low Gate Charge „ High Performance Trench Technology for Extremely Low rDS(on) „ High Power and Current Handling Capability „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.