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FDB024N06 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDB024N06 — N-Channel PowerTrench® MOSFET FDB024N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Renewable System D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Parameter - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (TC = 25oC) - Derate Above 25oC (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDB024N06 60 ±20 265 190 120 1060 2531 6.0 395 2.6 -55 to +175 300 Unit V V A A mJ V/ns W W/oC oC oC Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.

Key Features

  • RDS(on) = 1.8 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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