Datasheet Summary
- N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
60 V, 193 A, 3.1 mΩ
November 2013
Features
- RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
RDS(on)
- High Power and Current Handling Capability
- RoHS pliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor Drives and Uninterruptible...