Datasheet Summary
FDB0250N807L N-Channel PowerTrench® MOSFET
March 2016
N-Channel PowerTrench® MOSFET
80 V, 240 A, 2.2 mΩ
Features
- Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 30 A
- Max rDS(on) = 2.7 mΩ at VGS = 8 V, ID = 27 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
RDS(on)
- High Power and Current Handling Capability
- RoHS pliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
Applications
- Industrial...