Datasheet Summary
FDB0260N1007L N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
100 V, 200 A, 2.6 mΩ
March 2016
Features
- Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
RDS(on)
- High Power and Current Handling Capability
- RoHS pliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
Applications
- Industrial Motor Drive
- Industrial Power Supply
-...