Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
Industrial Motor Dr
Features
- Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A.
- Fast Switching Speed.
- Low Gate Charge.
- High Performance Trench Technology for Extremely Low
RDS(on).
- High Power and Current Handling Capability.
- RoHS Compliant
General.
FDB0260N1007L Datasheet
