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FDB0260N1007L - 100V 200A N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.

Industrial Motor Dr

Key Features

  • Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB0260N1007L N-Channel PowerTrench® MOSFET FDB0260N1007L N-Channel PowerTrench® MOSFET 100 V, 200 A, 2.6 mΩ March 2016 Features „ Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A „ Fast Switching Speed „ Low Gate Charge „ High Performance Trench Technology for Extremely Low RDS(on) „ High Power and Current Handling Capability „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.