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FDB0260N1007L Datasheet 100v 200a N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDB0260N1007L N-Channel PowerTrench® MOSFET FDB0260N1007L N-Channel PowerTrench® MOSFET 100 V, 200 A, 2.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.

Applications „ Industrial Motor Drive „ Industrial Power Supply „ Industrial Automation „ Battery Operated tools „ Battery Protection „ Solar Inverters „ UPS and Energy Inverters „ Energy Storage „ Load Switch 123 567 4 1.

Gate 2.

Key Features

  • Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 27 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant General.

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