FDB0190N807L Datasheet | Fairchild Semiconductor

FDB0190N807L N-Channel PowerTrench® MOSFET March 2016 N-Channel PowerTrench® MOSFET 80 V, 270 A, 1.7 mΩ Features - Max rDS(on) = 1.7 mΩ at VGS = 10 V, ID = 34 A - Max rDS(on) = 2 mΩ at VGS = 8 V, ID = 31 A - Fast Switching Speed - Low Gate Charge - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability - RoHS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications. Applications - Industrial Motor...