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FDB0190N807L - 80V 270A N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.

Industrial Motor Dr

Key Features

  • Max rDS(on) = 1.7 mΩ at VGS = 10 V, ID = 34 A.
  • Max rDS(on) = 2 mΩ at VGS = 8 V, ID = 31 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB0190N807L N-Channel PowerTrench® MOSFET March 2016 FDB0190N807L N-Channel PowerTrench® MOSFET 80 V, 270 A, 1.7 mΩ Features „ Max rDS(on) = 1.7 mΩ at VGS = 10 V, ID = 34 A „ Max rDS(on) = 2 mΩ at VGS = 8 V, ID = 31 A „ Fast Switching Speed „ Low Gate Charge „ High Performance Trench Technology for Extremely Low RDS(on) „ High Power and Current Handling Capability „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.