FDB016N04AL7 Datasheet | Fairchild Semiconductor

FDB016N04AL7 N-Channel PowerTrench® MOSFET June 2014 N-Channel PowerTrench® MOSFET 40 V, 306 A, 1.6 mW Features - RDS(on) = 1.16 mW (Typ.) @ VGS = 10 V, ID = 80 A - Fast Switching Speed - Low Gate Charge - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability - RoHS pliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. A- pplications - Synchronous Rectification for ATX / Server / Tele PSU - Battery Protection Circuit - Motor drives and Uninterruptible...