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FDB016N04AL7 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDB016N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB016N04AL7 N-Channel PowerTrench® MOSFET 40 V, 306 A, 1.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

A• pplications • Synchronous Rectification for ATX / Server / Tele PSU • Battery Protection Circuit • Motor drives and Uninterruptible Power Supplies 123 567 4 D2-PAK (TO-263) 1.

Gate 2.

Key Features

  • RDS(on) = 1.16 mW (Typ. ) @ VGS = 10 V, ID = 80 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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