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FDB047N10 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDB047N10 — N-Channel PowerTrench® MOSFET FDB047N10 N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous Continuous Continuous

Key Features

  • RDS(on) = 3.9 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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