FDB047N10 Key Features
- RDS(on) = 3.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant
| Part Number | Description |
|---|---|
| FDB045AN08A0 | N-Channel MOSFET |
| FDB045AN08_F085 | N-Channel MOSFET |
| FDB0165N807L | 80V 310A N-Channel MOSFET |
| FDB016N04AL7 | N-Channel MOSFET |
| FDB0170N607L | 60V 300A N-Channel MOSFET |