FDB2570 mosfet equivalent, n-channel mosfet.
* 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V
* Low gate charge (40nC typical)
* Fast switching speed
* High performance trench.
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 81.70KB)