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FDB8860 - N-Channel MOSFET

Key Features

  • RDS(ON) = 1.9mΩ (Typ), VGS = 5V, ID = 80A.
  • Qg(5) = 89nC (Typ), VGS = 5V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

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FDB8860 N-Channel Logic Level PowerTrench® MOSFET FDB8860 N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 2.6mΩ Features „ RDS(ON) = 1.9mΩ (Typ), VGS = 5V, ID = 80A „ Qg(5) = 89nC (Typ), VGS = 5V „ Low Miller Charge „ Low QRR Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ RoHS Compliant Applications „ DC-DC Converters December 2010 FDB8860 Rev A2 ©2010 Fairchild Semiconductor Corporation 1 FDB8860 Rev.A2 www.fairchildsemi.