FDBL0210N80 - MOSFET

Features

Typical RDS(on) = 1.5 mΩ at VGS = 10V, ID = 80 A.
Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A.
UIS Capability.
RoHS Compliant.

FDBL0210N80 MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – FDBL0210N80

Datasheet Details

Part number	FDBL0210N80
Manufacturer	Fairchild Semiconductor (now onsemi)
File Size	294.17 KB
Description	MOSFET
Datasheet	FDBL0210N80 Datasheet
Additional preview pages of the FDBL0210N80 datasheet.

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Full PDF Text Transcription

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FDBL0210N80 N-Channel PowerTrench® MOSFET FDBL0210N80 N-Channel PowerTrench® MOSFET 80 V, 240 A, 2.0 mΩ April 2015 Features Typical RDS(on) = 1.5 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Applications Industrial Motor Drive Industrial Power Supply Industrial Automations Battery Operated tools Battery Protection Solar Inverters UPS and Energy Inverters Energy Storage Load Switch D G S For current package drawing, please refer to the Fairchild web‐ site at http://www.fairchildsemi.com/dwg/PS/PSOF08A.pdf. MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.

Published: Jan 10, 2017 |