FDBL0210N80
FDBL0210N80 is MOSFET manufactured by Fairchild Semiconductor.
FDBL0210N80 N-Channel Power Trench® MOSFET
N-Channel Power Trench® MOSFET
80 V, 240 A, 2.0 mΩ
April 2015
Features
- Typical RDS(on) = 1.5 mΩ at VGS = 10V, ID = 80 A
- Typical Qg(tot) = 130 n C at VGS = 10V, ID = 80 A
- UIS Capability
- Ro HS pliant
Applications
- Industrial Motor Drive
- Industrial Power Supply
- Industrial Automations
- Battery Operated tools
- Battery Protection
- Solar Inverters
- UPS and Energy Inverters
- Energy Storage
- Load Switch
S For current package drawing, please refer to the Fairchild web‐ site at http://.fairchildsemi./dwg/PS/PSOF08A.pdf.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
- Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS Single Pulse Avalanche Energy
Power Dissipation Derate Above 25o...
