Download FDC638APZ Datasheet PDF
FDC638APZ datasheet preview
FDC638APZ page 2
Page 2
FDC638APZ page 3
Page 3

FDC638APZ Key Features

  • Max rDS(on) = 43mΩ at VGS = -4.5V, ID = -4.5A
  • Max rDS(on) = 68mΩ at VGS = -2.5V, ID = -3.8A
  • Low gate charge (8nC typical)
  • High performance trench technology for extremely low rDS(on)
  • SuperSOTTM -6 package:small footprint (72% smaller than standard SO-8) low profile (1mm thick)
  • RoHS pliant

Other FDC638APZ Datasheets

Manufacturer Part Number Description
ON Semiconductor Logo onsemi FDC638APZ P-Channel MOSFET
ON Semiconductor Logo onsemi FDC638P P-Channel MOSFET

View all FDC638APZ datasheets →

FDC638APZ Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion. Application „ DC - DC...