FDC638APZ Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FDC638APZ Features

* Max rDS(on) = 43mΩ at VGS =

* 4.5V, ID =

* 4.5A

* Max rDS(on) = 68mΩ at VGS =

* 2.5V, ID =

* 3.8A

* Low gate charge (8nC typical).

* High performance trench technology for extremely low rDS(on).

* SuperSOTTM

* 6 package:sma

FDC638APZ General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power app.

FDC638APZ Datasheet (398.37 KB)

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Datasheet Details

Part number:

FDC638APZ

Manufacturer:

Fairchild Semiconductor

File Size:

398.37 KB

Description:

N-channel mosfet.
FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET December 2006 FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET 20V, .

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FDC638APZ N-Channel MOSFET Fairchild Semiconductor

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FDC638APZ Features

FDC638APZ General Description

Datasheet Details

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