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FDC638APZ Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET December 2006 FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET –20V, –4.

General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion.

Application „ DC - DC Conversion S D D ..

D 1 2 3 3 6 D G D Pin 1 D D 5 4 D G S SuperSOTTM -6 MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings –20 ±12 –4.5 –20 1.6 0.8 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 78 156 °C/W Package Marking and Ordering Information Device Marking .638Z Device FDC638APZ Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDC638APZ Rev.B 1 .fairchildsemi.

Key Features

  • Max rDS(on) = 43mΩ at VGS =.
  • 4.5V, ID =.
  • 4.5A.
  • Max rDS(on) = 68mΩ at VGS =.
  • 2.5V, ID =.
  • 3.8A.
  • Low gate charge (8nC typical).
  • High performance trench technology for extremely low rDS(on).
  • SuperSOTTM.
  • 6 package:small footprint (72% smaller than standard SO.
  • 8) low profile (1mm thick).
  • RoHS Compliant General.

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FDC638APZ Distributor