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FDC8602

The FDC8602 is Dual N-Channel Shielded Gate PowerTrench MOSFET designed by Fairchild Semiconductor.

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Datasheet Details

Part number FDC8602
Manufacturer Fairchild Semiconductor
File Size 203.83 KB
Description Dual N-Channel Shielded Gate PowerTrench MOSFET
Datasheet download datasheet FDC8602-FairchildSemiconductor.pdf
Additional preview pages of the FDC8602 datasheet.

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Description

This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process Shielded Gate MOSFET Technology Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Complian

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