FDC8602 Datasheet - Fairchild Semiconductor

Dual N-Channel Shielded Gate PowerTrench MOSFET

FDC8602 General Description

This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process * Shielded Gate MOSFET Technology * Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A * Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A * High performance trench technolog.

FDC8602 Datasheet (203.83 KB)

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FDC8602

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Fairchild Semiconductor

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203.83 KB

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Dual n-channel shielded gate powertrench mosfet.
FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 1.2 A, 350 mΩ Feat.

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FDC8602 Dual N-Channel Shielded Gate PowerTrench MOSFET Fairchild Semiconductor

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FDC8602 General Description

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