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FDC8602 - Dual N-Channel Shielded Gate PowerTrench MOSFET

General Description

This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process Shielded Gate MOSFET Technology Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A High performance trench technolog

Key Features

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FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET May 2013 FDC8602 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 1.2 A, 350 mΩ Features General Description This N-Channel MOSFET advanced is produced using Fairchild that Semiconductor‘s PowerTrench® process „ Shielded Gate MOSFET Technology „ Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A „ Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.