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Fairchild Semiconductor Electronic Components Datasheet

FDD10AN06A0 Datasheet

N-Channel PowerTrench MOSFET 60V/ 50A/ 10.5m

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August 2002
FDD10AN06A0
N-Channel PowerTrench® MOSFET
60V, 50A, 10.5m
Features
• rDS(ON) = 9.4m(Typ.), VGS = 10V, ID = 50A
• Qg(tot) = 28nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82560
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN
(FLANGE)
D
GATE
SOURCE
G
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 115oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
S
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Ratings
60
±20
50
11
Figure 4
429
135
0.9
-55 to 175
1.11
100
52
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDD10AN06A0 Rev. A


Fairchild Semiconductor Electronic Components Datasheet

FDD10AN06A0 Datasheet

N-Channel PowerTrench MOSFET 60V/ 50A/ 10.5m

No Preview Available !

Package Marking and Ordering Information
Device Marking
FDD10AN06A0
Device
FDD10AN06A0
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 50V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 50A, VGS = 10V
ID = 25A, VGS = 6V
ID = 50A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V
ID = 50A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
VDD = 30V, ID = 50A
VGS = 10V, RGS = 10
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 8.58mH, IAS = 10A.
ISD = 50A
ISD = 25A
ISD = 50A, dISD/dt = 100A/µs
ISD = 50A, dISD/dt = 100A/µs
Min Typ Max Units
60 - - V
- -1
µA
- - 250
- - ±100 nA
2 - 4V
- 0.0094 0.0105
- 0.015 0.027
- 0.020 0.023
- 1840 -
pF
- 340 -
pF
- 110 -
pF
28 37 nC
- 3.5 4.6 nC
- 9.8 - nC
- 6.4 - nC
- 7.8 - nC
- - 131 ns
- 8 - ns
- 79 - ns
- 32 - ns
- 32 - ns
- - 97 ns
-
-
1.25
V
- - 1.0 V
- - 27 ns
- - 23 nC
©2002 Fairchild Semiconductor Corporation
FDD10AN06A0 Rev. A


Part Number FDD10AN06A0
Description N-Channel PowerTrench MOSFET 60V/ 50A/ 10.5m
Maker Fairchild Semiconductor
Total Page 11 Pages
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