FDD306P datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

*
  –6.7 A,
  –12 V. RDS(ON) = 28 mΩ @ VGS =
  –4.5 V RDS(ON) = 41 mΩ @ VGS =
  –2.5 V RDS(ON) = 90 mΩ @ VGS.

Application

* DC/DC converter General Description This P-Channel 1.8V Speciﬁed MOSFET uses Fairchild’s advanced low voltage Powe.

Description

This P-Channel 1.8V Speciﬁed MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management. D G S TO-252 S G D Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDSS .

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