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FDD306P Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET March 2015 FDD306P P-Channel 1.

General Description

This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management.

D G S TO-252 S G D Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistan

Key Features

  • 6.7 A,.
  • 12 V. RDS(ON) = 28 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 41 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 90 mΩ @ VGS =.
  • 1.8 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

FDD306P Distributor & Price

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