Description
This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features.
- 10 A, 80 V. RDS(ON) = 0.019 Ω @ VGS = 10 V RDS(ON) = 0.022 Ω @ VGS = 6 V.
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability. D
G S
TO-252
D
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID
TA=25 C.