FDD306P Datasheet | Fairchild Semiconductor

FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET March 2015 FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET Features - - 6.7 A, - 12 V. RDS(ON) = 28 mΩ @ VGS = - 4.5 V RDS(ON) = 41 mΩ @ VGS = - 2.5 V RDS(ON) = 90 mΩ @ VGS = - 1.8 V - Fast switching speed - High performance trench technology for extremely low RDS(ON) - High power and current handling capability Applications - DC/DC converter General Description This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management. S...