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FDD306P - MOSFET

General Description

This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management.

Key Features

  • 6.7 A,.
  • 12 V. RDS(ON) = 28 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 41 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 90 mΩ @ VGS =.
  • 1.8 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET March 2015 FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET Features ■ –6.7 A, –12 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 41 mΩ @ VGS = –2.5 V RDS(ON) = 90 mΩ @ VGS = –1.8 V ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ DC/DC converter General Description This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management.