FDD306P Description
This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management. D G S TO-252 S G D Ratings TA=25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range Thermal...
FDD306P Key Features
- 6.7 A, -12 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability