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FDD3510H - Dual N&P-Channel MOSFET

General Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Inverter H-Bridge

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A.
  • Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel.
  • Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A.
  • Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A.
  • 100% UIL Tested.
  • RoHS Compliant N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ General.

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FDD3510H Dual N & P-Channel PowerTrench® MOSFET April 2008 FDD3510H Dual N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel „ Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A „ Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel „ Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A „ Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A „ 100% UIL Tested „ RoHS Compliant N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.