FDD8424H datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

Q1: N-Channel
* Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A
* Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A Q2: P-Channel
* Max rDS(on) = 54mΩ at VGS = -10V, ID .

Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench- process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. A.

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