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FDD8426H Datasheet Dual P And N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDD8426H Dual N & P-Channel PowerTrench® MOSFET September 2009 FDD8426H Dual N & P-Channel PowerTrench®.

General Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Applications „ Inverter „ H-Bridge D1 D1/D2 D2 G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel G2 S2 P-Channel www.DataSheet4U.com MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Package Limited) ID - Continuous (Silicon Limited) - Continuous - Pulsed Power Dissipation for Single Operation PD EAS TJ, TSTG Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TC = 25°C (Note 1) TA = 25°C (Note 1a) TA = 25°C (Note 1b) (Note 3) 112 TC = 25°C TA = 25°C Q1 40 ±20 17 56 12 40 56 3.1 1.3 162 mJ °C -55 to +150 Q2 -40 ±20 -17 -48 -10 -40 65 W A Units V V Thermal Characteristics RθJC RθJC Thermal Resistance, Junction to Case, Single Operation for Q1 Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) (Note 1) 1.4 1.4 °C/W Package Marking and Ordering Information Device Marking FDD8426H Device FDD8426H Package TO-252-4L 1 Reel Size 13” Tape Width 12mm Quantity 2500units www.fairchildsemi.com ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C FDD8426H Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteri

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A.
  • Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A Q2: P-Channel.
  • Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A.
  • Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A.
  • 100% UIL Tested.
  • RoHS Compliant N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ General.

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