Description
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Inverter
H-Bridge
Features
- Q1: N-Channel.
- Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A.
- Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A Q2: P-Channel.
- Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A.
- Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A.
- 100% UIL Tested.
- RoHS Compliant
N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ General.
FDD8426H Datasheet
