FDD8424H Datasheet | Fairchild Semiconductor

FDD8424H Dual N & P-Channel PowerTrench® MOSFET March 2007 Dual N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel - Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A - Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A Q2: P-Channel - Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A - Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A - Fast switching speed - RoHS pliant tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench- process that has been especially tailored to minimize on-state resistance and yet maintain superior switching...