General Description
* Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A
* Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A
* Low gate charge: Qg(TOT) = 12.6nC(Typ), V.

* Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A
* Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A
* Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V
* Low gate resistance This N-Channel MOSFET has been designed specifically to improve t.

FDD8770

FDD8750

FDD8780

FDD8782

FDD8796

FDD8424H

FDD8424H_F085A

FDD8426H

FDD8444

FDD8444-F085

FDD8444L_F085

FDD8445

FDD8445_F085