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FDD8782 - N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Vcore DC-DC for Deskto

Features

  • Max rDS(on) = 11.0mΩ at VGS = 10V, ID = 35A.
  • Max rDS(on) = 14.0mΩ at VGS = 4.5V, ID = 35A.
  • Low gate charge: Qg(10) = 18nC(Typ), VGS = 10V.
  • Low gate resistance.
  • Avalanche rated and 100% tested.
  • RoHS Compliant D G D G DS I-PAK S G (TO-251AA) Short Lead I-PAK MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous (Package Limited).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD8782/FDU8782 N-Channel PowerTrench® MOSFET March 2015 FDD8782/FDU8782 N-Channel PowerTrench® MOSFET 25V, 35A, 11mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture Features „ Max rDS(on) = 11.0mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 14.0mΩ at VGS = 4.
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