* Max rDS(on) = 11.0mΩ at VGS = 10V, ID = 35A
* Max rDS(on) = 14.0mΩ at VGS = 4.5V, ID = 35A
* Low gate charge: Qg(10) = 18nC(Typ), VGS = 10V
* Low gate r.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching s.

FDD8780

FDD8750

FDD8770

FDD8778

FDD8796

FDD8424H

FDD8424H_F085A

FDD8426H

FDD8444

FDD8444-F085

FDD8444L_F085

FDD8445

FDD8445_F085