FDG1024NZ mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A
* Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A
* Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A
* Ma.
as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this d.
This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This devi.
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