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FDG8842CZ Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDG8842CZ Complementary PowerTrench® MOSFET FDG8842CZ Complementary PowerTrench® MOSFET April 2007 tm Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.

General Description

These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A.
  • Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel.
  • Max rDS(on) = 1.1Ω at VGS =.
  • 4.5V, ID =.
  • 0.41A.
  • Max rDS(on) = 1.5Ω at VGS =.
  • 2.7V, ID =.
  • 0.25A.
  • Very low level gate drive requirements allowing direct operation in 3V circuits(VGS(th).

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