| Part Number | FDG8842CZ Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
These N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is espec.
Q1: N-Channel * Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A * Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel * Max rDS(on) = 1.1Ω at VGS = *4.5V, ID = *0.41A * Max rDS(on) = 1.5Ω at VGS = *2.7V, ID = *0.25A * Very low level gate drive requirements allowing direct operation in 3V circuit. |
FDG8842CZ Datasheet and Specifications PDF
The FDG8842CZ is a MOSFET.
Key Specifications
| Package | SC |
|---|---|
| Mount Type | Surface Mount |
| Pins | 6 |
| Height | 1.1 mm |
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDG8842CZ Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially t.
Q1: N-Channel
* Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A * Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel * Max rDS(on) = 1.1Ω at VGS = *4.5V, ID = *0.41A * Max rDS(on) = 1.5Ω at VGS = *2.7V, ID = *0.25A * Very low level gate drive requirements allowing direct operation in 3V circuit. |