FDG8842CZ Overview
These N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applica-tions as a replacement for bipolar digital transistors and small signal MOSFETs.
FDG8842CZ Key Features
- Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
- Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel
- Max rDS(on) = 1.1Ω at VGS = -4.5V, ID = -0.41A
- Max rDS(on) = 1.5Ω at VGS = -2.7V, ID = -0.25A
- Very low level gate drive requirements allowing direct
- Very small package outline SC70-6
- RoHS pliant
- Continuous
- Pulsed
- 55 to +150
