FDG8842CZ Overview
Description
These N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.
Key Features
- Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
- Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel
- Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A
- Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A
- Very low level gate drive requirements allowing direct operation in 3V circuits(VGS(th) <1.5V)
- Very small package outline SC70-6
