FDH50N50 Key Features
- 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V
- Low gate charge ( typical 105 nC)
- Low Crss ( typical 45 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FDH50N50 | N-Channel MOSFET |
| FDH50N50 | N-Channel MOSFET |