FDH50N50
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V
- Low gate charge ( typical 105 nC)
- Low Crss ( typical 45 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
