FDH50N50 Datasheet | Fairchild Semiconductor

Features - 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V - Low gate charge ( typical 105 n C) - Low Crss ( typical 45 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. GD S TO-247 FDH Series G DS TO-3PN FDA Series {D z G{ z z {S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter FDH50N50_F133/FDA50N50 Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) 48 30.8 Gate-Source voltage ±20 Single Pulsed Avalanche Energy (Note...