FDH50N50 Datasheet PDF (500V N-Channel MOSFET) | Download Fairchild Semiconductor FDH50N50

FDH50N50 - 500V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V.
Low gate charge ( typical 105 nC).
Low Crss ( typical 45 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.

Datasheet Details

Part number	FDH50N50
Manufacturer	Fairchild Semiconductor
File Size	438.26 KB
Description	500V N-Channel MOSFET
Datasheet	FDH50N50 Datasheet
Additional preview pages of the FDH50N50 datasheet.

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Full PDF Text Transcription

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FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET October 2008 UniFETTM Features • 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V • Low gate charge ( typical 105 nC) • Low Crss ( typical 45 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Published: Mar 30, 2005 |