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FDI3632 - N-Channel MOSFET

Features

  • r DS(ON) = 7.5mΩ (Typ. ), V GS = 10V, ID = 80A.
  • Qg(tot) = 84nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 82784.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.
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