FDJ1027P Description
This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
FDJ1027P Key Features
- 2.8 A, -20 V RDS(ON) = 160 mΩ @ VGS = -4.5 V RDS(ON) = 230 mΩ @ VGS = -2.5 V RDS(ON) = 390 mΩ @ VGS = -1.8 V
- Low gate charge, High Power and Current handling