*
  –2.8 A,
  –20 V RDS(ON) = 160 mΩ @ VGS =
  –4.5 V RDS(ON) = 230 mΩ @ VGS =
  –2.5 V RDS(ON) = 390 mΩ @ VGS.

Features
*
  –2.8 A,
  –20 V RDS(ON) = 160 mΩ @ VGS =
  –4.5 V RDS(ON) =.

This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Features
*
.

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