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FDJ1027P - P-Channel MOSFET

General Description

This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

Key Features

  • 2.8 A,.
  • 20 V RDS(ON) = 160 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 230 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 390 mΩ @ VGS =.
  • 1.8 V.
  • Low gate charge, High Power and Current handling.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDJ1027P November 2004 FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET General Description This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Features • –2.8 A, –20 V RDS(ON) = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.