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FDJ1027P - P-Channel MOSFET

Datasheet Summary

Description

This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

Features

  • 2.8 A,.
  • 20 V RDS(ON) = 160 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 230 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 390 mΩ @ VGS =.
  • 1.8 V.
  • Low gate charge, High Power and Current handling.

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Datasheet Details

Part number FDJ1027P
Manufacturer Fairchild Semiconductor
File Size 134.91 KB
Description P-Channel MOSFET
Datasheet download datasheet FDJ1027P Datasheet
Additional preview pages of the FDJ1027P datasheet.

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Full PDF Text Transcription

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FDJ1027P November 2004 FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET General Description This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Features • –2.8 A, –20 V RDS(ON) = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.
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