Datasheet Summary
November 2004
P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
Features
- - 2.8 A,
- 20 V RDS(ON) = 160 mΩ @ VGS =
- 4.5 V RDS(ON) = 230 mΩ @ VGS =
- 2.5 V RDS(ON) = 390 mΩ @ VGS =
- 1.8 V
- Low gate charge, High Power and Current handling
Applications
- Battery management/Charger Application
- Load switch capability
- High performance trench technology for extremely low RDS(ON)
- FLMP SC75 package: Enhanced thermal performance in...