FDJ127P
Description
This P-Channel -1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.
Key Features
- 4.1 A, –20 V. RDS(ON) = 60 mΩ @ VGS = –4.5 V RDS(ON) = 85 mΩ @ VGS = –2.5 V RDS(ON) = 133 mΩ @ VGS = –1.8 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- pact industry standard SC75-6 surface mount package G S S SC75-6 FLMP SSS
