Datasheet Details
| Part number | FDJ127P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 165.36 KB |
| Description | P-Channel -1.8 Vgs Specified PowerTrench MOSFET |
| Datasheet |
 FDJ127P Datasheet
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General Description
This P-Channel -1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process.
It has been optimized for battery power management applications.
Battery management Load switchKey Features
- 4.1 A,.
- 20 V. RDS(ON) = 60 mΩ @ VGS =.
- 4.5 V RDS(ON) = 85 mΩ @ VGS =.
- 2.5 V RDS(ON) = 133 mΩ @ VGS =.
- 1.8 V.
- Low gate charge.
- High performance trench technology for extremely low RDS(ON).
- Compact industry standard SC75-6 surface mount package G S S SC75-6 FLMP SSS Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.