FDJ127P - P-Channel -1.8 Vgs Specified PowerTrench MOSFET

Fairchild Semiconductor

The FDJ127P by Fairchild Semiconductor is a P-Channel -1.8 Vgs Specified PowerTrench MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	FDJ127P
Manufacturer	Fairchild Semiconductor
File Size	165.36 KB
Description	P-Channel -1.8 Vgs Specified PowerTrench MOSFET
Datasheet	FDJ127P-FairchildSemiconductor.pdf
Additional preview pages of the FDJ127P datasheet.

This P-Channel -1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. Battery management Load switch

4.1 A,.
20 V. RDS(ON) = 60 mΩ @ VGS =.
4.5 V RDS(ON) = 85 mΩ @ VGS =.
2.5 V RDS(ON) = 133 mΩ @ VGS =.
1.8 V.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
Compact industry standard SC75-6 surface mount package G S S SC75-6 FLMP SSS Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.

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Published: Jan 15, 2016 |