FDJ128N Overview
Description
This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Key Features
- 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- Compact industry standard SC75-6 surface mount package G S S SSS
