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FDJ128N - N-Channel 2.5 Vgs Specified PowerTrench MOSFET

Datasheet Summary

Description

This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Battery management

Features

  • 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • Compact industry standard SC75-6 surface mount package G S S SSS Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Note 1a) PD TJ, TSTG Power Dissipation for Single Opera.

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Datasheet Details

Part number FDJ128N
Manufacturer Fairchild Semiconductor
File Size 171.17 KB
Description N-Channel 2.5 Vgs Specified PowerTrench MOSFET
Datasheet download datasheet FDJ128N Datasheet
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Full PDF Text Transcription

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FDJ128N August 2004 FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management Features • 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.
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