FDJ128N Datasheet | Fairchild Semiconductor

August 2004 N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications - Battery management Features - 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V - Low gate charge - High performance trench technology for extremely low RDS(ON) - pact industry standard SC75-6 surface mount...