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FDJ127P - P-Channel -1.8 Vgs Specified PowerTrench MOSFET

Datasheet Summary

Description

This P-Channel -1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process.

It has been optimized for battery power management applications.

Battery management Load switch

Features

  • 4.1 A,.
  • 20 V. RDS(ON) = 60 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 85 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 133 mΩ @ VGS =.
  • 1.8 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • Compact industry standard SC75-6 surface mount package G S S SC75-6 FLMP SSS Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.

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Datasheet Details

Part number FDJ127P
Manufacturer Fairchild Semiconductor
File Size 165.36 KB
Description P-Channel -1.8 Vgs Specified PowerTrench MOSFET
Datasheet download datasheet FDJ127P Datasheet
Additional preview pages of the FDJ127P datasheet.

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Full PDF Text Transcription

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FDJ127P July 2004 FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET General Description This P-Channel -1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • –4.1 A, –20 V. RDS(ON) = 60 mΩ @ VGS = –4.5 V RDS(ON) = 85 mΩ @ VGS = –2.5 V RDS(ON) = 133 mΩ @ VGS = –1.
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