FDJ127P Datasheet | Fairchild Semiconductor

July 2004 P-Channel -1.8 Vgs Specified PowerTrench MOSFET General Description This P-Channel -1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Applications - Battery management - Load switch Features - - 4.1 A, - 20 V. RDS(ON) = 60 mΩ @ VGS = - 4.5 V RDS(ON) = 85 mΩ @ VGS = - 2.5 V RDS(ON) = 133 mΩ @ VGS = - 1.8 V - Low gate charge - High performance trench technology for extremely low RDS(ON) - pact industry standard SC75-6 surface mount package SC75-6...