FDJ129P Overview
Description
This P-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Key Features
- 4.2 A, –20 V. RDS(ON) = 70 mΩ @ VGS = –4.5 V RDS(ON) = 120 mΩ @ VGS = –2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- Compact industry standard SC75-6 surface mount package
