FDJ128N
Description
This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.
Applications
- Battery management
Features
- 5.5 A, 20 V.
RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- pact industry standard SC75-6 surface mount package
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol
VDSS
VGSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
PD TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.B
7’’
Ratings
20 ± 12 5.5 16 1.6
- 55 to...
