FDJ128N mosfet equivalent, n-channel 2.5 vgs specified powertrench mosfet.
* 5.5 A, 20 V.
RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V
* Low gate charge
* High performance trench technology for extremely low RDS(ON)
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Applications
* Battery management
Features
* 5.5 A, 20 V.
RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS.
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