FDJ128N - N-Channel 2.5 Vgs Specified PowerTrench MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDJ128N
Manufacturer	Fairchild ↗ Semiconductor
File Size	171.17 KB
Description	N-Channel 2.5 Vgs Specified PowerTrench MOSFET
Datasheet	FDJ128N-FairchildSemiconductor.pdf

This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Battery management

5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
Compact industry standard SC75-6 surface mount package G S S SSS Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed (Note 1a) PD TJ, TSTG Power Dissipation for Single Opera.

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Published: Jan 14, 2016 |