FDMA1029PZ Datasheet (PDF) Download
Fairchild Semiconductor
FDMA1029PZ

Overview

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses.

  • x -3.1 A, -20V. RDS(ON) = 95 m: @ VGS = -4.5V RDS(ON) = 141 m: @ VGS = -2.5V
  • x Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  • x HBM ESD protection level > 2.5kV (Note 3)
  • x RoHS Compliant
  • Free from halogenated compounds and antimony oxides D1 D2 D1 G2 S2 MicroFET 2x2