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FDMA410NZ Datasheet - Fairchild Semiconductor

Single N-channel MOSFET

FDMA410NZ Features

* Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A

* Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A

* Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A

* Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A

* HBM ESD protection level > 2.5 kV (Note 3)

* Low Profi

FDMA410NZ General Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Applications * Li-lon Battery Pack Pin 1 D D G Bottom Drain Contact D D 1 2 3 6 5 4 D D Drain Source G S .

FDMA410NZ Datasheet (409.60 KB)

Preview of FDMA410NZ PDF

Datasheet Details

Part number:

FDMA410NZ

Manufacturer:

Fairchild Semiconductor

File Size:

409.60 KB

Description:

Single n-channel mosfet.
FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET September 2008 FDMA410NZ www.datasheet4u.com tm Single N-Channel 1.5 V Specified Po.

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FDMA410NZ Single N-channel MOSFET Fairchild Semiconductor

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