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FDMA410NZ - Single N-channel MOSFET

Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.

Li-lon Battery Pack Pin 1 D D G Bottom Drain Contact D D 1 2 3 6 5 4 D D Drain Source G S

Features

  • Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A.
  • Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A.
  • Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A.
  • Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A.
  • HBM ESD protection level > 2.5 kV (Note 3).
  • Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm.
  • RoHS Compliant ® General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET September 2008 FDMA410NZ www.datasheet4u.com tm Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 mΩ Features „ Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A „ Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A „ Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A „ Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A „ HBM ESD protection level > 2.5 kV (Note 3) „ Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm „ RoHS Compliant ® General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
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