Description
This Single N
onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe.
Features
- Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A.
- Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A.
- Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0 A.
- Max RDS(on) = 50 mW at VGS = 1.5 V, ID = 2.0 A.
- HBM ESD Protection Level > 2.5 kV (Note 3).
- Low Profile.
- 0.8 mm Maximum in the New Package MicroFET
2x2 mm.
- Free from Halogenated Compounds and Antimony Oxides.
- This Device is Pb.
- Free, Halide Free and is RoHS Compliant.
FDMA410NZ Datasheet
