Description
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
Li-lon Battery Pack
Pin 1
D
D
G
Bottom Drain Contact D D 1 2 3 6 5 4 D D
Drain
Source
G
S
Features
- Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A.
- Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A.
- Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A.
- Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A.
- HBM ESD protection level > 2.5 kV (Note 3).
- Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm.
- RoHS Compliant
®
General.
FDMA410NZ Datasheet
